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Announcements

IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material (July 2017)

IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material (July 2017)

The foundry is proposed to be developed around an existing facility for producing gallium nitride
transistors on silicon wafers, at the IISc’s Centre for Nano Science and Engineering (CeNSE), under the leadership of associate professor Srinivasan Raghavan. (Click here to read more)

IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material (June 2016)

IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material (June 2016)

The government is likely to begin a feasibilty study for a Rs 2,500-crore Galium Nitride
semiconductor fab that has been proposed by scientists at the Indian Institute of Science (IISc) and if approved, could help India revive its bets on building a local semiconductor industry. (Click here to
read more).

India could develop a gallium nitride fab, if the government is willing to invest (July 2018)

India could develop a gallium nitride fab, if the government is willing to invest (July 2018)

While a section of the semiconductor industry feels that a domestic fab is of strategic importance, other industry observers feel the money would be wasted if Indian companies are not able to get an international market quickly for their electronics products. (Click here to read more).

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and
Incubator in Bengaluru (Mar 2022)

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and Incubator in Bengaluru (Mar 2022)

The minister after reviewing the progress of the project and inspecting the facility, highlighted its
importance by stating that “The next 2 to 3 years offers a window of opportunity for Gallium Nitride
(GaN) to play a key role in enabling e-vehicles and wireless communication”. (Click here to read
more).

Press information bureau.

Press information bureau.

Rise-up journey of Agnit and Indian semiconductor industry

Rise-up journey of Agnit and Indian semiconductor industry

Rise-up journey of Agnit and Indian semiconductor industry – Interview by CEO of Agnit semiconductors pvt ltd., Dr Hareesh Chandrasekar (Click here to view the video).

IISc firm offers tech with uses from 5G to fast-charging EVs

IISc firm offers tech with uses from 5G to fast-charging EVs

Agnit, a deeptech firm incubated at the Indian Institute of Science (IISc), is offering Gallium Nitride
(GaN) semiconductor components that are finding uses in variety of products. (Click here to readmore).

IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material (July 2017)

IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material (July 2017)

The foundry is proposed to be developed around an existing facility for producing gallium nitride
transistors on silicon wafers, at the IISc’s Centre for Nano Science and Engineering (CeNSE), under the leadership of associate professor Srinivasan Raghavan. (Click here to read more)

IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material (June 2016)

IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material (June 2016)

The government is likely to begin a feasibilty study for a Rs 2,500-crore Galium Nitride
semiconductor fab that has been proposed by scientists at the Indian Institute of Science (IISc) and if approved, could help India revive its bets on building a local semiconductor industry. (Click here to
read more).

India could develop a gallium nitride fab, if the government is willing to invest (July 2018)

India could develop a gallium nitride fab, if the government is willing to invest (July 2018)

While a section of the semiconductor industry feels that a domestic fab is of strategic importance, other industry observers feel the money would be wasted if Indian companies are not able to get an international market quickly for their electronics products. (Click here to read more).

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and
Incubator in Bengaluru (Mar 2022)

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and Incubator in Bengaluru (Mar 2022)

The minister after reviewing the progress of the project and inspecting the facility, highlighted its
importance by stating that “The next 2 to 3 years offers a window of opportunity for Gallium Nitride
(GaN) to play a key role in enabling e-vehicles and wireless communication”. (Click here to read
more).

Press information bureau.

Press information bureau.

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and
Incubator in Bengaluru (Mar 2022)

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and Incubator in Bengaluru (Mar 2022)

The minister after reviewing the progress of the project and inspecting the facility, highlighted its
importance by stating that “The next 2 to 3 years offers a window of opportunity for Gallium Nitride
(GaN) to play a key role in enabling e-vehicles and wireless communication”. (Click here to read
more).

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and
Incubator in Bengaluru (Mar 2022)

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and Incubator in Bengaluru (Mar 2022)

The minister after reviewing the progress of the project and inspecting the facility, highlighted its
importance by stating that “The next 2 to 3 years offers a window of opportunity for Gallium Nitride
(GaN) to play a key role in enabling e-vehicles and wireless communication”. (Click here to read
more).

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and
Incubator in Bengaluru (Mar 2022)

Rajeev Chandrasekhar reviews progress of Gallium Nitride Ecosystem Enabling Center and Incubator in Bengaluru (Mar 2022)

The minister after reviewing the progress of the project and inspecting the facility, highlighted its
importance by stating that “The next 2 to 3 years offers a window of opportunity for Gallium Nitride
(GaN) to play a key role in enabling e-vehicles and wireless communication”. (Click here to read
more).

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