Join Us in Pioneering the
GaN Revolution
Blend deep scientific research with startup speed to build the next generation of GaN materials, devices & systems. Every idea counts; every day is an experiment.
Our Mission
We democratise GaN by uniting materials scientists, device physicists, fabrication engineers and RF specialists under one roof. From wafers to RF modules, we turn breakthrough research into products that power telecom, defence and electrification worldwide.
Work with us to turn GaN possibilities into products
Why Agnit
Backed by science
Spin-out from IISc with 18+ years of patented GaN R&D.
Proven impact
MoD contract to build indigenous GaN chips for next-gen radars & EW.
Backed by science
$3.5 M seed led by 3one4 Capital & Zephyr Peacock (Oct 2024).
Depth of talent
Founding team >100 years combined semiconductor experience.
Vertical integration
Materials → processes → devices under one roof—rare for a startup.
What we look for
Curious minds who speak fluent circuits and collaboration. If you:
Thrive in cross-disciplinary, hands-on settings
Turn deep tech into real-world impact
Enjoy solving first-of-its-kind problems
—you’ll fit right in.
Email careers@agnitsemi.com with:
Résumé, area of interest, and one project that shows your problem-solving super-power.
