Gallium Nitride (or GaN) is a new semiconductor material, which by virtue of its material properties delivers compact, efficient, high-power, high-frequency semiconductor components that can be used in electronic circuits for the next-generation of wireless applications. GaN components are the future of wireless transmitters and are being rapidly adopted in the radio-frequency microwave and mm-wave markets to enable efficient wireless transmitters across a spectrum of use-cases in telecom and defence, to name a few. AGNIT’s patent-protected, differentiated, ITAR-free GaN technology enables the key power amplification modules in all of these application spaces.
Datasheets for our current products can be found on this page.
GaN RF Power Transistors
Agnit GaN RF HEMT Die – ACL350010DA (A- AGNIT, C- GaN-on-SiC, L -28V Operation, 3500 – Upto 3500 MHz operation, 10 – Upto 10 W of Psat, D – die, A- Gen 1 device)
Description
AGNIT’s AGC-A-28C10-D is a Gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrate that operates from DC to 3.5 GHz at 28 V drain quiescent bias
GaN RF Power Amplifiers
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GaN RF Switches
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