The starting point of any Gallium Nitride device development activity is necessarily the Gallium Nitride material itself. Due to the lack of native substrates, the challenge of hetero-epitaxial growth of GaN using specialized techniques and defect and stress management considerations is of the essence. The interplay between material quality and device performance is often the key differentiator for producing high-performance, manufacturable GaN solutions.
Agnit’s extensive know-how and patented technology, developed over more than 15 years of research and development, enables us to offer device quality Gallium Nitride epitaxial stacks grown by Metal Organic Chemical Vapor Deposition (MOCVD) on Silicon Carbide, Silicon, Sapphire and other technologically relevant substrates as required.
Please see our product catalogue below for a current list of our products. We are happy to work with you for your custom epitaxial needs. Please use the Contact form to submit the details of such a request and we will get back to you shortly.
For a readily available, off-the-shelf GaN HEMT stack please see the standard stack we offer below as a reference.
Agnit Epitaxial GaN on SiC HEMT wafer – AEGCH25G2
(AE- AGNIT epitaxy, GCH – GaN-on-SiC HEMT, 25 – % Al in barrier, G – GaN cap, 2 – 2” wafer diameter)
Wafer Substrate
4H HPSI Silicon carbide
Wafer size
2 inch
Carrier Density
8x1012 cm-2
Mobility
~2000 cm2/V s
Sheet Resistance
<350 Ω/sq
RMS roughness
<0.5 nm
Cap
SiN or GaN cap of 3 nm
AlGaN barrier layer composition
23%-25% of Al
XRD FWHM (002)
<200 arc secs
XRD FWHM(102)
<320 arc secs
