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We, at Agnit, design and manufacture GaN materials (wafers) and electronic components primarily for radio-frequency applications. AGNIT’s patent-protected, differentiated technology is the result of >15 years of R&D at the Indian Institute of Science, Bangalore, India and spans the key verticals of Gallium Nitride materials, manufacturing processes and device design. All three elements are essential to offering high-performance, customizable GaN-based solutions to electronic sub-system and systems designers/manufacturers operating in the application spaces mentioned above.

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