Muralidharan Rangarajan (Late) was a co-founder of AGNIT Semiconductors. He served as the CEO of the Gallium Arsenide Enabling Technology Centre from 2006 to 2009 and as the Director of the Solid-State Physics Laboratory at DRDO from 2008 to 2015. In July 2015, he joined CeNSE, IISc, as a Visiting Professor. During his time at the Solid-State Physics Laboratory, Muralidharan played a key role in advancing high-frequency GaAs-based material and device technologies. He also contributed to the development of material and device technologies for GaN-based High Electron Mobility Transistors, aimed at high-power and high-frequency applications.