Bhargavi Anand is a Process Engineer at AGNIT Semiconductors Pvt Ltd, working on Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) RF devices. Her role encompasses developing new processes with process integration and characterization on silicon carbide substrates within a cleanroom environment. Prior to joining AGNIT, Bhargavi contributed as a Project Associate at the Centre for Nano Science and Engineering (CeNSE) at the Indian Institute of Science (IISc) Bangalore.