Sandeep completed his PhD in 2020 from the Centre for Nano Science and Engineering (CeNSE), IISc Bangalore, specializing in III-N power devices with a focus on normally-off MOS-HEMTs. After his PhD, he spent over three years at NICT, Tokyo, Japan, working on Ga₂O₃ power device technology. Since June 2023, he has been with AGNIT Semiconductors, leading device and process development for various types of RF HEMTs. He is also involved in RF circuit design, a field he gained expertise in during his Master's in Microelectronics and VLSI Design at IIT Kharagpur.