Physics-based device modelling and TCAD simulation for RF GaN devices. Terirama received her PhD in 2021 from Kyungpook National University, South Korea. During her PhD, she worked on TCAD modelling of Gallium Nitride Devices. She was awarded a best paper award by Samsung Electronics, South Korea for her paper on Modelling of GaN nanowire MOSFET. She worked as a Research Associate in University of Bristol, UK from 2021-2023, for a European Space Agency funded project on Gallium Nitride devices for RF application.