GaN RF Devices

GaN RF Devices

High-efficiency GaN RF transistors for DC to 12 GHz operation. Designed to meet demanding power, frequency, and linearity requirements across S-band, L-band, and X-band applications.

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Explore More from AGNIT

Explore More from AGNIT

From high-quality GaN wafers to RF devices and ready-to-test evaluation boards—AGNIT's product ecosystem is designed to accelerate performance at every stage of your innovation journey.

GaN Wafers

Epitaxial GaN wafers grown on Si, SiC, and Sapphire substrates, engineered for power, RF, and optoelectronic applications.

GaN Wafers

Epitaxial GaN wafers grown on Si, SiC, and Sapphire substrates, engineered for power, RF, and optoelectronic applications.

GaN Wafers

Epitaxial GaN wafers grown on Si, SiC, and Sapphire substrates, engineered for power, RF, and optoelectronic applications.

Evaulation Boards

Test and validate with precision using boards designed for Agnit’s GaN RF devices—available across pulsed and continuous modes.

Evaulation Boards

Test and validate with precision using boards designed for Agnit’s GaN RF devices—available across pulsed and continuous modes.

Evaulation Boards

Test and validate with precision using boards designed for Agnit’s GaN RF devices—available across pulsed and continuous modes.

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