AGNIT's epitaxial GaN wafers are built on a proven MOCVD platform with 20+ years of material science expertise. Available across Si, SiC, and Sapphire substrates, our wafers enable scalable, high-performance solutions for RF, power, and optoelectronic devices.
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From high-quality GaN wafers to RF devices and ready-to-test evaluation boards—AGNIT's product ecosystem is designed to accelerate performance at every stage of your innovation journey.
